Two-dimensional transition metal dichalcogenides as atomically thin semiconductors: opportunities and challenges - Chemical Society Reviews (RSC Publishing) DOI:10.1039/C5CS00507H
Advanced Multifunctional Field Effect Devices Using Common Gate for Both 2D Transition‐Metal Dichalcogenide and InGaZnO Channels - Yu - 2019 - Advanced Electronic Materials - Wiley Online Library
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First Demonstration of WSe2 CMOS Inverter with Modulable Noise Margin by Electrostatic Doping | Semantic Scholar
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Photodoping in 2-D materials for fabrication of logic devices
Van der Waals junction field effect transistors with both n- and p-channel transition metal dichalcogenides | npj 2D Materials and Applications
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Polarity control in a single transition metal dichalcogenide (TMD) transistor for homogeneous complementary logic circuits - Nanoscale (RSC Publishing)
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Solution-Processed 2D Transition Metal Dichalcogenides: Materials to CMOS Electronics | Accounts of Materials Research
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Robust molybdenum diselenide ambipolar transistors with fluoropolymer interfacial layer and their application to complementary inverter circuits - ScienceDirect
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Low Power Consumption Complementary Inverters with n-MoS2 and p-WSe2 Dichalcogenide Nanosheets on Glass for Logic and Light-Emitting Diode Circuits | ACS Applied Materials & Interfaces
Static and Dynamic Performance of Complementary Inverters Based on Nanosheet α-MoTe2 p-Channel and MoS2 n-Channel Transistors | ACS Nano
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